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                 ? 2009 IXYS All rights reserved 1 - 3 DSEP 29-12A 20091012a IXYS reserves the right to change limits, test conditions and dimensions. IFAV VRRM = 1200 V trr =40ns =30A VRSM VRRM Type V V 1200 1200 DSEP 29-12A Symbol Conditions Maximum Ratings IFRMS IFAVM 35 A TC = 115°C; rectangular, d = 0.5 30 A IFSM TVJ = 45°C; t p = 10 ms (50 Hz), sine 200 A EAS TVJ = 25°C; non-repetitive 14 mJ IAS = 11.5 A; L = 180 μH IAR VA = 1.25 ·VR typ.; f = 10 kHz; repetitive 1.2 A TVJ TVJM Tstg -55...+175 °C 175 °C -55...+150 °C Ptot TC = 25°C 165 W Md mounting torque 0.4...0.6 Nm Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR ∠ VR = V RRM;TVJ = 25°C 250 μA TVJ = 150°C 1 mA VF ⌒ IF = 30 A; T VJ = 150°C 1.81 V TVJ = 25°C 2.75 V RthJC RthCH 0.9 K/W 0.5 K/W trr IF = 1 A; -di/dt = 200 A/μs; 40 ns VR = 30 V; T VJ = 25°C IRM VR = 100 V; I F = 50 A; -di F/dt = 100 A/μs 8.5 11.4 A TVJ = 100°C HiPerFREDTM Epitaxial Diode with soft recovery Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low I RM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: ∠ Pulse Width = 5 ms, Duty Cycle < 2.0% ⌒ Pulse Width = 300 μs, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. C A A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) |